氮化镓场效应晶体管(GaN FET)

Type number

Package version

Package name

Product status

Channel type

Nr of transistors

VDS [max] (V)

RDSon [max] @ VGS = 10 V (mΩ)

RDSon [typ] @ VGS = 10 V (mΩ)

Tj [max] (°C)

ID [max] (A)

ID [max] @ T = 100 °C (A)

IDM [max] (A)

QGD [typ] (nC)

QG(tot) [typ] @ VGS = 10 V (nC)

Ptot [max] (W)

Qr [typ] (nC)

VGSth [typ] (V)

Automotive qualified

Ciss [typ] (pF)

Coss [typ] (pF)

Rth(j-mb) [max] (K/W)

GAN039-650NBB

SOT8000

CCPAK

Development

N

1

650

39

33

175

59

42

237

5

26

300

167

4

N

1500

147

0.5

GAN039-650NBBA

SOT8000

CCPAK

Development

N

1

650

39

33

175

60

42

240

5

30

300

112

4

Y

1500

147

0.5

GAN039-650NTB

SOT8005

CCPAK

Development

N

1

650

39

33

175

60

42

240

15

30

300

150

4

N

1500

147

0.5

GAN039-650NTBA

SOT8005

CCPAK

Development

N

1

650

39

33

175

60

42

240

15

30

300

150

4

Y

1500

147

0.5

GAN041-650WSB

SOT429

TO-247

Production

N

1

650

41

35

175

47.2

33.4

240

5

22

187

150

3.9

N

1500

147

0.8

GAN063-650WSA

SOT429

TO-247

Production

N

1

650

60

50

175

34.5

24.4

150

4

15

143

125

3.9

N

1000

130

1.05