SiC 碳化硅

等级 Grade 

Z级
Zero MPD

工业级
Production

研究级
Research Grade

试片级
Dummy Grade

直径 Diameter 

50.8 ±0.38 mm, 76.2 ±0.38 mm, 100±0.5 mm, 150±0.25mm

厚度 Thickness 

4H-N 

350 μm±25μm

4H-SI

500 μm±25μm

晶片方向 Wafer Orientation 

 Off axis : 4.0° toward 1120 !±0.5° for 4H-N                      On axis : <0001>±0.5° for 4H-SI

微管密度 Micropipe Density 

≤1 cm-2 

≤5 cm-2 

≤15 cm-2 

≤50 cm-2

电阻率 Resistivity

4H-N 

0.015~0.028 Ω·cm

6H-N 

0.02~0.1 Ω·cm

4/6H-SI 

>1E5 Ω·cm 

(90%) >1E5 Ω·cm

主定位边方向 Primary Flat 

{10-10}±5.0°

主定位边长度 Primary Flat Length 

15.9 mm±1.7 mm,  22.2 mm±3.2 mm, 32.5 mm±2.0 mm,  47.5 mm±2.5 mm

次定位边长度 Secondary Flat Length 

8.0 mm±1.7 mm, 11.2 mm±1.5 mm, 18.0mm±2.0 mm, -----, 

次定位边方向 Secondary Flat Orientation 

Silicon face up: 90° CW. from Prime flat ±5.0°

边缘 Edge exclusion 

3 mm

总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp 

≤15μm /≤25μm /≤40μm

表面粗糙度 Roughness 

Polish Ra≤1 nm

CMP Ra≤0.5 nm

裂纹(强光灯观测) 
Cracks by high intensity light 

None 

None 

1 allowed, ≤1 mm

六方空洞(强光灯观测)
Hex Plates by high intensity light 

Cumulative area≤1 % 

Cumulative area≤1 % 

Cumulative area≤3 %

多型(强光灯观测)
Polytype Areas by high intensity light 

None 

Cumulative area≤2 % 

Cumulative area≤5%

划痕(强光灯观测) 
Scratches by high intensity light

3 scratches to 1× wafer diameter
cumulative length

5 scratches to 1× wafer diameter
cumulative length

8 scratches to 1× wafer diameter
cumulative length

崩边 Edge chip 

None 

3 allowed, ≤0.5 mm each 

5 allowed, ≤1 mm each

表面污染物(强光灯观测)
Contamination by high intensity light 

None