Type/Dopant 导电类型/掺杂元素 |
Semi-Insulated |
P-Type/Zn |
N-Type/Si |
N-Type/Si |
Application 应用 |
Micro Eletronic |
LED |
Laser Diode |
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Growth Method 长晶方式 |
VGF |
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Diameter 直径 |
2", 3", 4", 6" |
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Orientation 晶向 |
(100)±0.5° |
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Thickness 厚度 (µm) |
350-625um±25um |
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OF/IF 参考边 |
US EJ or Notch |
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Carrier Concentration 载流子浓度 |
- |
(0.5-5)*1019 |
(0.4-4)*1018 |
(0.4-0.25)*1018 |
Resistivity 电阻率 (ohm-cm) |
>107 |
(1.2-9.9)*10-3 |
(1.2-9.9)*10-3 |
(1.2-9.9)*10-3 |
Mobility 电子迁移率 (cm2/V.S.) |
>4000 |
50-120 |
>1000 |
>1500 |
Etch Pitch Density 位错密度(/cm2) |
<5000 |
<5000 |
<5000 |
<500 |
TTV 平整度 [P/P] (µm) |
<5 |
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TTV 平整度 [P/E] (µm) |
<10 |
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Warp 翘曲度 (µm) |
<10 |
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Surface Finished 表面加工 |
P/P, P/E, E/E |
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