碳化硅SiC晶片

raybet投注经销世界知名品牌碳化硅SiC晶片产品。碳化硅SiC晶片生长方式，等级，直径，厚度，表面处理，晶向，晶向偏角，掺杂类型，电阻率，薄膜，加工服务。

产品详情

等级 Grade		Z级 Zero MPD	工业级 Production	研究级 Research Grade	试片级 Dummy Grade
直径 Diameter		50.8 ±0.38 mm, 76.2 ±0.38 mm, 100±0.5 mm, 150±0.25mm
厚度 Thickness	4H-N	350 μm±25μm
	4H-SI	500 μm±25μm
晶片方向 Wafer Orientation		Off axis : 4.0° toward 1120 !±0.5° for 4H-N On axis : <0001>±0.5° for 4H-SI
微管密度 Micropipe Density		≤1 cm-2	≤5 cm-2	≤15 cm-2	≤50 cm-2
电阻率 Resistivity	4H-N	0.015~0.028 Ω·cm
	6H-N	0.02~0.1 Ω·cm
	4/6H-SI	>1E5 Ω·cm			(90%) >1E5 Ω·cm
主定位边方向 Primary Flat		{10-10}±5.0°
主定位边长度 Primary Flat Length		15.9 mm±1.7 mm, 22.2 mm±3.2 mm, 32.5 mm±2.0 mm, 47.5 mm±2.5 mm
次定位边长度 Secondary Flat Length		8.0 mm±1.7 mm, 11.2 mm±1.5 mm, 18.0mm±2.0 mm, -----,
次定位边方向 Secondary Flat Orientation		Silicon face up: 90° CW. from Prime flat ±5.0°
边缘 Edge exclusion		3 mm
总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp		≤15μm /≤25μm /≤40μm
表面粗糙度 Roughness		Polish Ra≤1 nm
		CMP Ra≤0.5 nm
裂纹(强光灯观测) Cracks by high intensity light		None		None	1 allowed, ≤1 mm
六方空洞(强光灯观测) Hex Plates by high intensity light		Cumulative area≤1 %		Cumulative area≤1 %	Cumulative area≤3 %
多型(强光灯观测) Polytype Areas by high intensity light		None		Cumulative area≤2 %	Cumulative area≤5%
划痕(强光灯观测) Scratches by high intensity light		3 scratches to 1× wafer diameter cumulative length		5 scratches to 1× wafer diameter cumulative length	8 scratches to 1× wafer diameter cumulative length
崩边 Edge chip		None		3 allowed, ≤0.5 mm each	5 allowed, ≤1 mm each
表面污染物(强光灯观测) Contamination by high intensity light		None