Type 导电类型 |
Semi-Insulated |
N-Type |
P-Type |
NP Type |
Dopant 掺杂元素 |
Fe |
S, Sn |
Zn |
Undoped |
Growth Method 长晶方式 |
VGF |
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Diameter 直径 |
2", 3", 4", 6" |
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Orientation 晶向 |
(100)±0.5° |
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Thickness 厚度 (µm) |
350-675um ±25um |
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OF/IF 参考边 |
US EJ |
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Carrier Concentration 载流子浓度 |
- |
(0.8-8)*1018 |
(0.8-8)*1018 |
(1-10)*1015 |
Resistivity 电阻率 (ohm-cm) |
>0.5*107 |
- |
- |
- |
Mobility 电子迁移率 (cm2/V.S.) |
>1000 |
1000-2500 |
50-100 |
3000-5000 |
Etch Pitch Density 位错密度(/cm2) |
<5000 |
<5000 |
<500 |
<500 |
TTV 平整度 [P/P] (µm) |
<10 |
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TTV 平整度 [P/E] (µm) |
<15 |
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Warp 翘曲度 (µm) |
<15 |
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Surface Finished 表面加工 |
P/P, P/E, E/E |
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