Czochralski  | 
         Float Zone  | 
         Float Zone  | 
        |
Diameter  | 
         100-150 mm  | 
         50-150 mm*  | 
         100-150 mm*  | 
        
Crystal orientation  | 
         <100> <111>  | 
         <100> <111>  | 
         <100> <111>  | 
        
Orientation accuracy  | 
         <0.5°  | 
         <0.5°  | 
         <0.5°  | 
        
Type and dopant  | 
         Undoped, n-type,  | 
         Undoped, n-type,  | 
         Undoped, n-type,  | 
        
Dopant  | 
         As, B, P, and Sb  | 
         P, B  | 
         P, B  | 
        
Bulk resistivity  | 
         0.001-60  | 
         1-30,000  | 
         1-30,000  | 
        
Bulk lifetime  | 
         >20 µs  | 
         >1,000 µs  | 
         >1,000 µs  | 
        
Wafer thickness  | 
         200-1,500 µm  | 
         200-1,500 µm  | 
         200-1,500 µm  | 
        
Wafer thickness  | 
         ±15 µm  | 
         ±15 µm  | 
         ±5 µm  | 
        
TTV  | 
         <5 µm or <9 µm  | 
         <5 µm or <9 µm  | 
         <2.5 µm  | 
        
TIR  | 
         <3 µm  | 
         <3 µm  | 
         <1 µm  | 
        
Wafer surface finish  | 
         Single side polished,  | 
         Single side  | 
         Double side  |