Diameter |
4" |
5" |
6" |
8" |
|
Device Layer |
Dopant |
Boron, Phos, Arsenic, Antimony, Undoped |
|||
Orientation |
<100>, <111> |
||||
Type |
SIMOX, BESOI, Simbond, Smart-cut |
||||
Resistivity |
0.001-20000 Ohm-cm |
||||
Thickness (um) |
0.2-150 |
||||
The Uniformity |
<5% |
||||
BOX Layer |
Thickness (um) |
0.4-3 |
|||
Uniformity |
<2.5% |
||||
Substrate |
Orientation |
<100>, <111> |
|||
Type/Dopant |
P Type/Boron , N Type/Phos, N Type/As, N Type/Sb |
||||
Thickness (um) |
300-725 |
||||
Resistivity |
0.001-20000 Ohm-cm |
||||
Surface Finished |
P/P, P/E |
||||
Particle |
<10@.0.3um |
||||
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